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3N25x-E4 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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3N25x-E4 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page 2KBPxxM-E4, 3N25x-E4 www.vishay.com Vishay General Semiconductor Revision: 05-Aug-15 3 Document Number: 88532 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.1 1 10 100 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Polarity shown on front side of case: positive lead by beveled corner 0.125 x 45° (3.2) 0.600 (15.24) 0.560 (14.22) 0.034 (0.86) 0.028 (0.76) 0.105 (2.67) 0.085 (2.16) 0.160 (4.1) 0.140 (3.6) 0.060 (1.52) 0.460 (11.68) 0.50 (12.7) MIN. 0.420 (10.67) 0.500 (12.70) 0.460 (11.68) 0.60 (15.2) MIN. DIA. 0.200 (5.08) 0.180 (4.57) Case Style KBPM |
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