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2SK899 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK899 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK899 · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA 500 V VGS(TH) Gate Threshold Voltage VDS=10V; ID= 1mA 2.1 3.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=8A 0.28 0.33 Ω IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 500 uA Gfs Forward Transconductance VDS= 25V;ID=8A 8 S ton Turn-on time VGS=30V;ID=2.8A; RL=50Ω 130 195 ns toff Turn-off time 330 430 ns VSD Diode Forward Voltage IF=36A; VGS=0 1.0 1.7 V |
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