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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRF7490 Arkusz danych(PDF) 2 Page - International Rectifier |
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IRF7490 Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7490 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 8.0 ––– ––– S VDS = 50V, ID = 3.2A Qg Total Gate Charge ––– 37 56 ID = 3.2A Qgs Gate-to-Source Charge ––– 8.0 nC VDS = 50V Qgd Gate-to-Drain ("Miller") Charge ––– 10 VGS = 10V, td(on) Turn-On Delay Time ––– 13 ––– VDD = 100V tr Rise Time ––– 4.2 ––– ID = 3.2A td(off) Turn-Off Delay Time ––– 51 ––– RG = 9.1Ω tf Fall Time ––– 11 ––– VGS = 10V Ciss Input Capacitance ––– 1720 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 25 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1650 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 130 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 250 ––– VGS = 0V, VDS = 0V to 80V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 91 mJ IAR Avalanche Current ––– 3.2 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 3.2A, VGS = 0V trr Reverse Recovery Time ––– 67 100 ns TJ = 25°C, IF = 3.2A Qrr Reverse RecoveryCharge ––– 220 330 nC di/dt = 100A/µs Diode Characteristics 2.3 43 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 33 39 m Ω VGS = 10V, ID = 3.2A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current |
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