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GS74116AGX-12I Arkusz danych(PDF) 7 Page - GSI Technology |
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GS74116AGX-12I Arkusz danych(HTML) 7 Page - GSI Technology |
7 / 14 page tAA tRC Address tAC tLZ tAB tBLZ tOE tOLZ CE UB, LB OE Data Out tHZ tBHZ tOHZ Data valid High impedance GS74116AGP/X Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.10 1/2013 7/13 © 2001, GSI Technology Read Cycle 2: WE = VIH Write Cycle Parameter Symbol -8 -10 -12 Unit Min Max Min Max Min Max Write cycle time tWC 8 — 10 — 12 — ns Address valid to end of write tAW 5.5 — 7 — 8 — ns Chip enable to end of write tCW 5.5 — 7 — 8 — ns Byte enable to end of write tBW 5.5 — 7 — 8 — ns Data set up time tDW 4 — 4.5 — 6 — ns Data hold time tDH 0 — 0 — 0 — ns Write pulse width tWP 5.5 — 7 — 8 — ns Address set up time tAS 0 — 0 — 0 — ns Write recovery time (WE) tWR 0 — 0 — 0 — ns Write recovery time (CE) tWR1 0 — 0 — 0 — ns Output Low Z from end of write tWLZ* 3 — 3 — 3 — ns Write to output in High Z tWHZ* — 3.5 — 4 — 5 ns * These parameters are sampled and are not 100% tested. |
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