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FM13N50 Arkusz danych(PDF) 1 Page - First Components International

Numer części FM13N50
Szczegółowy opis  13Amps 500 Voltage N Channel POWER MOSFET
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Producent  FCI [First Components International]
Strona internetowa  http://www.cotra.com.tw/
Logo FCI - First Components International

FM13N50 Arkusz danych(HTML) 1 Page - First Components International

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Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
Drain to Source Voltage
500
V
ID
Continuous Drain Current(@TC = 25°C)
13
A
Continuous Drain Current(@TC = 100°C)
8A
IDM
Drain Current Pulsed
(Note 1)
52
A
VGS
Gate to Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
950
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Total Power Dissipation(@TC = 25 °C)
208
W
Derating Factor above 25 °C
1.67
W/°C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
°C
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
RθJC
Thermal Resistance, Junction-to-Case
-
-
0.60
°C/W
RθCS
Thermal Resistance, Case to Sink
-
0.50
-
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
Features
RDS(on) (Max 0.49 Ω )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
N-Channel MOSFET
Symbol
2. Drain
3. Source
1. Gate
TO-220
1 2
3
FM13N50 13Amps 500 Voltage N Channel POWER MOSFET


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