FMDS55N03 datasheet(2/2 Pages) FCI

Numer części	FMDS55N03

Szczegółowy opis	30V N-Channel Enhancement-Mode MOSFET

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Producent	FCI [First Components International]

Strona internetowa	http://www.cotra.com.tw/

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ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250uA

30

-

V

Drain-Source On-State Resistance

RDS(on)

VGS = 4.5V, ID = 30A

7.5

9.0

Drain-Source On-State Resistance

RDS(on)

VGS = 10V, ID = 30A

4.5

6.0

Gate Threshold Voltage

VGS(th)

VDS =VGS, ID = 250uA

1

1.6

3

V

Zero Gate Voltage Drain Current

IDSS

VDS = 25V, VGS = 0V

1

uA

Gate Body Leakage

IGSS

VGS = +20V, VDS = 0V

+ 100

nA

Gate Resistance

Rg

Forward Transconductance

gfs

VDS = 15V, ID = 15A

S

Dynamic

Total Gate Charge

Qg

26

Gate-Source Charge

Qgs

6

Gate-Drain Charge

Qgd

5

Turn-On Delay Time

td(on)

17

Turn-On Rise Time

tr

3.5

Turn-Off Delay Time

td(off)

40

Turn-Off Fall Time

tf

6

Input Capacitance

Ciss

2134

Output Capacitance

Coss

343

Reverse Transfer Capacitance

Crss

134

Source-Drain Diode

Max. Diode Forward Current

IS

20

A

Diode Forward Voltage

VSD

IS = 20A, VGS = 0V

0.85

1.3

V

Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

VDS = 15V, VGS = 0V

f = 1.0 MHz

pF

m

Ω

VDD = 15V, RL = 15Ω

Ι

D = 1Α, VGEN = 10V

RG = 6Ω

ns

VDS = 15V, ID = 25A

VGS = 10V

FMD

S55N03 30V N-Channel Enhancement-Mode

Podobny numer części - FMDS55N03

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First Components Intern...	FMDS55N02	361Kb / 2P	25V N-Channel Enhancement-Mode MOSFET

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FMDS55N03 Arkusz danych(PDF) 2 Page - First Components International

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