BC807 datasheet(1/2 Pages) FCI

Numer części	BC807

Szczegółowy opis	Silicon Epitaxial Plannar Transistors

Download	2 Pages

Scroll/Zoom	100%

Producent	FCI [First Components International]

Strona internetowa	http://www.cotra.com.tw/

Logo

1 / 2 page

1.3

2.4

BC807-16LT1

BC807-25LT1

BC807-40LT1

FEATURES

·Ldeally suited for automatic insertion

·epitaxial planar die construction

·complementary NPN type available(BC817)

MARKING: 16LT1:5A1;

25LT1:5B;

40LT1:5C

MAXIMUM RATINGS* TA=25

℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.5

A

PC

Collector Dissipation

0.3

W

TJ, Tstg

Junction and Storage Temperature

-55-150

℃

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

VCBO

Ic= -10 μA，

IE=0

-50

V

Collector-emitter breakdown voltage

VCEO

Ic= -10

mA， IB=0

-45

V

Emitter-base breakdown voltage

VEBO

IE= -1 μA，

IC=0

-5

V

Collector cut-off current

ICBO

VCB= -45 V ,

IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE= -40 V ,

IB=0

-0.2

μA

Emitter cut-off current

IEBO

VEB= -4 V ,

IC=0

-0.1

μA

DC current gain

807-16

807-25

807-40

hFE（1）

VCE= -1V,

IC= -100mA

100

160

250

400

600

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50 mA

-0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= -500 mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE= -5 V,

IC= -10mA

f=100MHz

100

MHz

Unit : mm

SOT—23

1. BASE

2. EMITTER

3. COLLECTOR

PNP Silicon Epitaxial Plannar Transistors

Podobny numer części - BC807

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	BC807	47Kb / 8P	PNP general purpose transistor 1999 Apr 08
Kingtronics Internation...	BC807	296Kb / 2P	Collector Base Voltage
Diotec Semiconductor	BC807	175Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
Jinan Jing Heng Electro...	BC807	1Mb / 5P	PNP Plastic-Encapsulate Transistors
KEC(Korea Electronics)	BC807	41Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR

More results

Podobny opis - BC807

Producent	Numer części	Arkusz danych	Szczegółowy opis
First Components Intern...	BC817	59Kb / 1P	NPN Silicon Epitaxial Plannar Transistors
SHIKUES Electronics	LL4148	717Kb / 4P	Silicon Epitaxial Plannar Switching Diode
Wing Shing Computer Com...	2SC4596E	69Kb / 1P	SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)
Wing Shing Computer Com...	BU407	64Kb / 1P	SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)
List of Unclassifed Man...	2SB1062	57Kb / 1P	Si PNP Epitaxial Plannar
Panasonic Semiconductor	2SB751	291Kb / 7P	Si PNP EPITAXIAL PLANNAR DARLINGTON
Shenzhen Luguang Electr...	1N3004W	1Mb / 3P	Silicon Epitxaial Plannar Diode Revision:20170701-P1
List of Unclassifed Man...	2SC3853	278Kb / 2P	Silicon NPN Triple diffused Plannar
TRANSYS Electronics Lim...	BF820	51Kb / 2P	SILICON EPITAXIAL TRANSISTORS
Continental Device Indi...	BF820	86Kb / 3P	SILICON EPITAXIAL TRANSISTORS

More results

BC807 Arkusz danych(PDF) 1 Page - First Components International

BC807 Arkusz danych(HTML) 1 Page - First Components International

Podobny numer części - BC807

Podobny opis - BC807

Html Pages

1 2

Arkusz danych Pobierz

Link URL