2SC4460 datasheet(2/6 Pages) FOSHAN

Numer części	2SC4460

Szczegółowy opis	Silicon NPN transistor in a TO-3P Plastic Package.

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Producent	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Strona internetowa	http://www.fsbrec.com/

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2 / 6 page

2SC4460

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

800

V

Collector to Emitter Voltage

VCEO

500

V

Emitter to Base Voltage

VEBO

7.0

V

Collector Current - Continuous

IC

15

A

Peak Collector Current

ICP

25

A

Base Current

IB

4.0

A

Collector Power Dissipation

PC

3.0

W

Collector Power Dissipation

PC(TC=25 )

℃

55

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=1.0mA

IE=0

800

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=5.0mA

RBE=∞

500

V

Emitter to Base Breakdown Voltage

VEBO

IB=1.0mA

IC=0

7.0

V

Collector Cut-Off Current

ICBO

VCB=500V

IE=0

10

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

10

μA

DC Current Gain

hFE(1)

VCE=5.0V

IC=1.2A

15

50

hFE(2)

VCE=5.0V

IC=6.0A

8

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=6.0A

IB=1.2A

1.0

V

Base to Emitter Saturation Voltage

VBE(sat)

VCE=6.0V

IB=1.2A

1.5

V

Transition Frequency

fT

VCE=10V

IC=1.2A

18

MHz

Collector output capacitance

Cob

f=1.0MHz

VCB=10V

160

pF

Turn-On Time

ton

VCC=200V

0.5

μs

Storage Time

tstg

5IB1=-2.5IB2=IC=7A

3.0

μs

Fall Time

tf

RL=28.6Ω

0.3

μs

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

Podobny numer części - 2SC4460

Producent	Numer części	Arkusz danych	Szczegółowy opis
Sanyo Semicon Device	2SC4460	97Kb / 3P	Switching Regulator Applications
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