2SD1710A datasheet(2/6 Pages) FOSHAN

Numer części	2SD1710A

Szczegółowy opis	Silicon NPN transistor in a TO-220 Plastic Package.

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Producent	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Strona internetowa	http://www.fsbrec.com/

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2 / 6 page

2SD1710A

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

900

V

Collector to Emitter Voltage

VCEO

500

V

Emitter to Base Voltage

VEBO

9.0

V

Collector Current - Continuous

IC

8.0

A

Peak Collector Current

ICM

12

A

Collector Power Dissipation

PC(Tc=25 )

℃

50

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=1mA

IB=0

900

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

500

V

Collector Cut-Off Current

ICEO

VCE=500V

IE=0

250

μA

Emitter Cut-Off Current

IEBO

VEB=9V

IC=0

100

μA

Collector Cut-Off Current

ICBO

VCB=900V

IC=0

100

μA

DC Current Gain

hFE(1)

VCE=5.0V

IC=2.0A

25

40

hFE(2)

VCE=5.0V

IC=5.0A

8.0

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=4.0A

IB=1.0A

5.0

V

Base to Emitter Saturation

Voltage

VBE(sat)

IC=4.0A

IB=1.0A

1.5

V

Transition Frequency

fT

VCE=5V

IC=0.1A

2.0

MHz

Fall Time

tS

VCC=125V

IC=5A

IB1=-IB2=0.8A

RL=50Ω

3.5

μs

Storage Time

tf

0.7

μs

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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