KSB772 datasheet(2/6 Pages) FOSHAN

Numer części	KSB772

Szczegółowy opis	Silicon PNP transistor in a TO-126 Plastic Package.

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Producent	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Strona internetowa	http://www.fsbrec.com/

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2 / 6 page

KSB772

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-3.0

A

Base Current - Continuous

IB

-0.6

A

Collector Power Dissipation

PC

1.0

W

Collector Power Dissipation

PC(TC=25 )

℃

10

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=-30V

IE=0

-1.0

μA

Emitter Cut-Off Current

IEBO

VEB=-3.0V

IC=0

-1.0

μA

DC Current Gain

hFE(1)

VCE=-2.0V

IC=-1.0A

60

160

400

hFE(2)

VCE=-2.0V

IC=-20mA

30

220

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-2.0A

IB=-0.2A

-0.3

-0.5

V

Base to Emitter Saturation Voltage

VBE(sat) IC=-2.0A

IB=-0.2A

-1.0

-2.0

V

Turn On Time

fT

VCE=-5.0V

IE=0.1A

80

MHz

Collector Output Capacitance

Cob

VCB=-10V

IE=0

f=1.0MHz

55

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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