TIP122 datasheet(2/6 Pages) FOSHAN

Numer części	TIP122

Szczegółowy opis	Silicon NPN transistor in a TO-220 Plastic Package.

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Producent	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

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2 / 6 page

TIP122

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCEO

100

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

5.0

A

Peak Collector Current

ICP

8.0

A

Base Current - Continuous

IB

120

mA

Collector Power Dissipation

PC

2.0

W

Collector Power Dissipation

PC(Tc=25 )

℃

65

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=100mA

IB=0

100

V

Collector Cut-Off Current

ICEO

VCE=50V

IB=0

0.5

mA

Collector Cut-Off Current

ICBO

VCB=100V

IE=0

0.2

mA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

2.0

mA

DC Current Gain

hFE(1)

VCE=3.0V

IC=0.5A

1000

hFE(2)

VCE=3.0V

IC=3.0A

1000

Collector to Emitter Saturation

Voltage

VCE(sat)(1) IC=3.0A

IB=12mA

2.0

V

VCE(sat)(2) IC=5.0A

IB=20mA

4.0

V

Base to Emitter Voltage

VBE

IC=3.0A

VCE=3.0V

2.5

V

Collector output capacitance

Cob

VCB=10V

IE=0

f=0.1MHz

200

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

Podobny numer części - TIP122

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Mospec Semiconductor	TIP122	206Kb / 4P	POWER TRANSISTORS(5.0A,60-100V,65W)
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