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STC4301D Arkusz danych(PDF) 3 Page - Stanson Technology

Numer części STC4301D
Szczegółowy opis  N&P Pair Enhancement Mode MOSFET
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Producent  STANSON [Stanson Technology]
Strona internetowa  http://www.stansontech.com
Logo STANSON - Stanson Technology

STC4301D Arkusz danych(HTML) 3 Page - Stanson Technology

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STC4301D
N&P Pair Enhancement Mode MOSFET
23.0A / -20.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4301D 2017. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=10mA
VGS=0V,ID=-10mA
N
P
40
-40
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250 uA
VDS=VGS,ID=-250uA
N
P
1.0
-1.0
2.5
-2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=0V,VGS=±20V
N
P
±
100
±
100
nA
Zero Gate Voltage Drain
Current
IDSS
TJ=25℃
TJ=55℃
VDS=32V,VGS=0V
VDS=-32V,VGS=0V
N
P
1
-1
uA
VDS=32V,VGS=0V
VDS=-32V,VGS=0V
N
P
5
-5
Drain-source On-Resistance RDS(on)
VGS=10V, ID=10.0A
VGS=-10V,ID=-10.0A
N
P
0.025
0.035
0.032
0.043
Ω
VGS=4.5V, ID=6.0A
VGS=-4.5V,ID=-5.0 A
N
P
0.030
0.040
0.037
0.065
Forward Tran Conductance
gfs
VDS=5V,ID=12.0A
VDS=-5V,ID=-8.0A
N
P
8
12.6
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
IS=-1.0A,VGS=0V
N
P
1.2
-1.2
V
Dynamic
Total Gate Charge
Qg
N-Channel
VDS=20V,VGS=4.5V
ID≡12.0A
P-Channel
VDS=-20V,VGS=-4.5V
ID≡-12.0A
N
P
5.5
9
nC
Gate-Source Charge
Qgs
N
P
1.25
2.54
Gate-Drain Charge
Qgd
N
P
2.5
3.1
Turn-On Time
td(on)
tr
N-Channel
VDS=20V,RG=3.3Ω
ID=1A,VGS=10V
P-Channel
VDS=-20V,RG=3.3Ω
ID=-1A,RGS=-10V
N
P
8.9
18.7
nS
N
P
2.2
12.7
Turn-Off Time
td(off)
tf
N
P
15.6
30.2
N
P
3.0
15


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