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4N32 Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części 4N32
Szczegółowy opis  Optocoupler, Photodarlington Output, High Gain With Base Connection
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

4N32 Arkusz danych(HTML) 2 Page - Vishay Siliconix

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4N32, 4N33
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 15-Feb-11
2
Document Number: 81865
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
(1) Indicates JEDEC® registered values
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
3V
Forward current
IF
60
mA
Power dissipation
Pdiss
100
mW
Derate linearly
From 55 °C
1.33
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
30
V
Emitter base breakdown voltage
BVEBO
8V
Collector base breakdown voltage
BVCBO
50
V
Emitter collector breakdown voltage
BVECO
5V
Collector (load) current
IC
100
mA
Power dissipation
Pdiss
150
mW
Derate linearly
2mW/°C
COUPLER
Total dissipation
Ptot
250
mW
Derate linearly
3.3
mW/°C
Isolation test voltage (between emitter
1 s
VISO
5300
VRMS
Leakage path
7mm min.
Air path
7mm min.
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
-55 to +150
°C
Operating temperature
Tamb
-55 to +100
°C
Lead soldering time (1)
at 260 °C
10
s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
-
1.25
1.5
V
Reverse current
VR = 3 V
IR
-
0.1
100
μA
Capacitance
VR = 0 V
CO
-25
pF
OUTPUT
Collector emitter breakdown voltage (1)
IC = 100 μA, IF = 0
BVCEO
30
-
-
V
Collector base breakdown voltage (1)
IC = 100 μA, IF = 0
BVCBO
50
-
-
V
Emitter base breakdown voltage (1)
IC = 100 μA, IF = 0
BVEBO
8-
-
V
Emitter collector breakdown voltage (1)
IC = 100 μA, IF = 0
BVECO
510
-
V
Collector emitter leakage current
VCE = 10 V, IF = 0
ICEO
-
1
100
nA
IC = 0.5 mA, VCE = 5 V
hFE
13
-
-
COUPLER
Collector emitter saturation voltage
VCEsat
-1
-
V
Coupling capacitance
-
1.5
-
pF


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