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BC808 Arkusz danych(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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BC808 Arkusz danych(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 3 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC808 TRANSISTOR (PNP) FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.8 A PC* Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 630 DC current gain hFE(2) VCE=-1V, IC=-300mA 60 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.7 V Base-emitter voltage VBE VCE=-1V, IC=-300mA -1.2 V Transition frequency fT VCE=-5V, IC=-10mA, f=50MHz 100 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 12 pF CLASSIFICATION OF hFE Rank 16 25 40 Range hFE(1) 100-250 160-400 250-630 Marking 5E 5F 5G SOT-23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com B,Oct,2014 JC T |
Podobny numer części - BC808 |
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Podobny opis - BC808 |
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