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2SK2618LS Arkusz danych(PDF) 1 Page - Sanyo Semicon Device |
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2SK2618LS Arkusz danych(HTML) 1 Page - Sanyo Semicon Device |
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1 / 1 page 960329TM2fXHD 2SK2618LS Absolute Maximum Ratings / Ta=25 °C Electrical Characteristics / Ta=25 °C Switching Time Test Circuit TENTATIVE Case Outline Features and Applications • Low ON-state resistance. • Low Qg SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 50 Ω P.G 2SK2618LS S G D VOUT VDD=200V ID=3A RL=66.7 PW=1 µS D.C. ≤0.5% VGS=15V RGS Specifications and information herein are subject to change without notice. 10.0 0.9 1.2 0.75 4.5 2.8 0.7 2.55 2.55 1 2 3 TO-220FI(LS) (unit:mm) φ 3.2 N- Channel MOS Silicon FET Very High-Speed Switching Applications 500 ±30 5 20 30 150 --55 to +150 V V A A W °C °C min typ max unit 500 3.5 1.5 V mA nA V S Ω pF pF pF nC ns ns ns ns V (Tc=25 °C) VDSS VGSS ID IDP PD Tch Tstg V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD ID=1mA , VGS=0 VDS=500V , VGS=0 VGS= ±30V , VDS=0 VDS=10V , ID=1mA VDS=10V , ID=3A ID=3A , VGS=15V VDS=20V , f=1MHz VDS=20V , f=1MHz VDS=20V , f=1MHz VDS=200V , ID=5A GS=10V See Specified Test Circuit IS =5A , VGS = 0 unit 3.0 0.95 700 250 120 20 20 20 50 25 1.0 ±100 5.5 1.25 1.2 Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable power Dissipation Channel Temperature Storage Temperature Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Diode Forward Voltage |
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