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IRF7488 Dane(HTML) 2 Page - International Rectifier

Numer części IRF7488
Szczegółowy opis  HEXFET Power MOSFET
Pobierz  9 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF7488 Datasheet(Arkusz danych) 2 Page - International Rectifier

  IRF7488 Datasheet HTML 1Page - International Rectifier IRF7488 Datasheet HTML 2Page - International Rectifier IRF7488 Datasheet HTML 3Page - International Rectifier IRF7488 Datasheet HTML 4Page - International Rectifier IRF7488 Datasheet HTML 5Page - International Rectifier IRF7488 Datasheet HTML 6Page - International Rectifier IRF7488 Datasheet HTML 7Page - International Rectifier IRF7488 Datasheet HTML 8Page - International Rectifier IRF7488 Datasheet HTML 9Page - International Rectifier  
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IRF7488
2
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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
9.3
–––
–––
S
VDS = 15V, ID = 3.8A
Qg
Total Gate Charge
–––
38
57
ID = 3.8A
Qgs
Gate-to-Source Charge
–––
9.1
nC
VDS = 40V
Qgd
Gate-to-Drain ("Miller") Charge
–––
12
VGS = 10V,
td(on)
Turn-On Delay Time
–––
13
–––
VDD = 40V
tr
Rise Time
–––
12
–––
ID = 3.8A
td(off)
Turn-Off Delay Time
–––
44
–––
RG = 9.1Ω
tf
Fall Time
–––
16
–––
VGS = 10V
ƒ
Ciss
Input Capacitance
–––
1680 –––
VGS = 0V
Coss
Output Capacitance
–––
270
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
32
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
1760 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
170
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
340
–––
VGS = 0V, VDS = 0V to 64V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
96
mJ
IAR
Avalanche Current

–––
3.8
A
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 3.8A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
65
98
ns
TJ = 25°C, IF = 3.8A
Qrr
Reverse RecoveryCharge
–––
190
290
nC
di/dt = 100A/µs
ƒ
Diode Characteristics
2.3
50
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
80
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.089
–––
V/°C
Reference to 25°C, ID = 1mA
ƒ
RDS(on)
Static Drain-to-Source On-Resistance
–––
24
29
m
Ω VGS = 10V, ID = 3.8A ƒ
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 80V, VGS = 0V
–––
–––
250
VDS = 64V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -20V
IGSS
IDSS
Drain-to-Source Leakage Current


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