TS9410VB

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 23-May-17

1

Document Number: 84291

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Specification of High Power IR Emitting Diode Chip

DESCRIPTION

TS9410VB is a high power infrared, 940 nm surface emitting

diode in GaAlAs technology with high radiant power and

high speed. Polarity configuration is “n-up”.

FEATURES

• Package type: chip

• Package form: single chip

• Technology: surface emitter

• Dimensions chip (L x W x H in mm):

0.260 x 0.260 x 0.17

• Peak wavelength:

λ = 940 nm

• Material categorization:

for

definitions

of

compliance

please

see

www.vishay.com/doc?99912

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

Note

• Test condition see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

TS9410VB

20

60

940

10

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TS9410VB-SF-F

Wafer sawn on foil

MOQ: 385 000 pcs

Chip

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Forward current

100

mA

Reverse voltage

5V

Surge forward current

500

mA

Junction temperature

100

°C

Operating temperature range

-40 to +100

°C

Storage temperature range chip

-40 to +110

°C

Storage temperature range on foil

-40 to +40

°C