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KTD2058 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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KTD2058 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente KTD2058 3A, 60V P Plastic-Encapsulated Transistor 01-Sep-2016 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low collector saturation voltage: VCE(sat)=1V (Max.) CLASSIFICATION OF hFE Product-Rank Y Range 100-200 ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current IC 3 A Collector Power Dissipation PC 2 W Thermal Resistance from Junction to Ambient RθJA 150 °C Junction and Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 60 - - V IC=50mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 7 - - V IE=0.1mA, IC=0 Collector Cut-Off Current ICBO - - 100 µA VCB=60V, IE=0 Emitter Cut-Off Current IEBO - - 100 µA VEB=7V, IC=0 DC Current Gain hFE 100 - 200 VCE=5V, IC=0.5A Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=2A, IB=0.2A Base to Emitter Voltage VBE(on) - - 1 V VCE=5V, IC=0.5A Transition Frequency fT - 3 - MHz VCE=5V, IC=0.5A Collector Output Capacitance Cob - 35 - pF VCB=10V, IE=0, f =1MHz Turn-on Time ton 0.65 Storage Time tstg 1.3 Fall Time tf 0.65 µS TO-220J Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 9.57 10.57 I 4.68 5.48 B 3.54 4.14 J 2.95 3.96 C 2.54 2.94 K 4.27 4.87 D 11.86 13.26 L 1.07 1.47 E 0.97 1.57 M 8.0 10.0 F 0.51 1.11 N 2.03 2.92 G 12.7 13.8 Q 0.30 0.65 H 2.540 TYP. |
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