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RGT50NL65D Arkusz danych(PDF) 2 Page - Rohm

Numer części RGT50NL65D
Szczegółowy opis  650V 25A Field Stop Trench IGBT
Download  13 Pages
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RGT50NL65D Arkusz danych(HTML) 2 Page - Rohm

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Datasheet
RGT50NL65D
Thermal Resistance
IGBT Electrical Characteristics
(at Tj = 25°C unless otherwise specified)
Collector - Emitter Saturation
Voltage
Unit
Min.
Typ.
Max.
Thermal Resistance IGBT Junction - Case
Rθ(j-c)
-
-
0.77
°C/W
Parameter
Symbol
Values
°C/W
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Thermal Resistance Diode Junction - Case
Rθ(j-c)
-
-
2.12
--
V
Collector Cut - off Current
ICES
VCE = 650V, VGE = 0V
--
10
μA
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
200
nA
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 17.5mA
5.0
6.0
7.0
V
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
VCE(sat)
IC = 25A, VGE = 15V
V
Tj = 25°C
-
1.65
2.1
Tj = 175°C
-
2.15
-
2/11
2017.05 - Rev.A


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