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PZT882J-O Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT882J-O Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente PZT882J 3A, 40V NPN Silicon Medium Power Transistor 25-Jan-2017 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. D882 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low collector-emitter saturation voltage CLASSIFICATION OF hFE Product-Rank PZT882J-O PZT882J-Y PZT882J-GR Range 100~200 160~320 200~400 MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 3 A Collector Dissipation PC 1.25 W Junction and Storage Temperature TJ, TSTG -55~150 °C ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 40 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 1 µ A VCB=40V, IE=0 Collector Cut-Off Current ICEO - - 10 µ A VCE=30V, IB=0 Emitter Cut-Off Current IEBO - - 1 µ A VEB=6V, IC=0 100 - 400 VCE=2V, IC=1A DC Current Gain hFE 32 - - VCE=2V, IC=100mA Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=2A, IB=200mA Base-Emitter Saturation Voltage VBE(sat) - - 1.5 V IC=2A, IB=200mA Transition Frequency fT - 50 - MHz VCE=5V, IC=100mA, f=10MHz Top View 1 2 3 4 A M B D L K F G H J E C SOT-223 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.42 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 |
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