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TSFF5510 Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części TSFF5510
Szczegółowy opis  High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSFF5510 Arkusz danych(HTML) 2 Page - Vishay Siliconix

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TSFF5510
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
2
Document Number: 81835
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0
1020
3040506070
8090 100
21142
T
amb - Ambient Temperature (°C)
R
thJA = 230 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
T
amb - Ambient Temperature (°C)
21143
R
thJA = 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.3
1.45
1.7
V
IF = 450 mA, tp = 100 μs
VF
1.5
1.75
2.1
V
IF = 1 A, tp = 100 μs
VF
2.1
V
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
mV/K
Reverse current
VR = 5 V
IR
10
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
110
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
16
32
48
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
e
55
mW
Temperature coefficient of
e
IF = 100 mA
TK
e
- 0.35
%/K
Angle of half intensity
± 38
deg
Peak wavelength
IF = 100 mA
p
870
nm
Spectral bandwidth
IF = 100 mA

55
nm
Temperature coefficient of
p
IF = 100 mA
TK
p
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz


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