Zakładka z wyszukiwarką danych komponentów |
|
SI5513DC-T1-E3 Arkusz danych(PDF) 4 Page - Vishay Siliconix |
|
SI5513DC-T1-E3 Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 7 page Si5513DC Vishay Siliconix www.vishay.com 4 Document Number: 71186 S-42138—Rev. F, 15-Nov-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 0 1234 5 TJ = 150_C TJ = 25_C ID = 3.1 A 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) 0 30 50 10 20 Single Pulse Power Time (sec) 40 1 100 600 10 10−1 10−2 10−4 10−3 10−3 10−2 1 10 600 10−1 10−4 100 −0.6 −0.4 −0.2 −0.0 0.2 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1000 |
Podobny numer części - SI5513DC-T1-E3 |
|
Podobny opis - SI5513DC-T1-E3 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |