STPS1H100A datasheet(2/7 Pages) STMICROELECTRONICS

Numer części	STPS1H100A

Szczegółowy opis	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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Producent	STMICROELECTRONICS [STMicroelectronics]

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STPS1H100

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Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.08 IF

2

(RMS)

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

SMA

30

°C/W

SMB

25

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current

Tj = 25°C

VR = VRRM

4

µA

Tj = 125°C

0.2

0.5

mA

VF **

Forward voltage drop

Tj = 25°C

IF = 1A

0.77

V

Tj = 125°C

0.58

0.62

Tj = 25°C

IF = 2A

0.86

Tj = 125°C

0.65

0.7

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Average forward current versus

ambient temperature (

δ = 0.5)

Figure

3:

Normalized

avalanche

power

derating versus pulse duration

Figure

4:

Normalized

avalanche

power

derating versus junction temperature

P

(W)

F(AV)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

T

δ=tp/T

tp

I

(A)

F(AV)

δ = 1

δ = 0.1

δ = 0.05

δ = 0.5

δ = 0.2

I

(A)

F(AV)

0

20

40

60

80

100

120

140

160

180

0.0

0.2

0.4

0.6

0.8

1.0

1.2

T

δ=tp/T

tp

T

(°C)

amb

R

=100°C/W

th(j-a)

R=R

th(j-a)

th(j-I)

R

=120°C/W

th(j-a)

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(t )

P

(1µs)

ARM p

ARM

0

0.2

0.4

0.6

0.8

1

1.2

25

50

75

100

125

150

T (°C)

j

P(t )

P

(25°C)

ARM p

ARM

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