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EC733341L Arkusz danych(PDF) 2 Page - E-CMOS Corporation

Numer części EC733341L
Szczegółowy opis  -30V, -4.2A P-Channel MOSFET
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Producent  E-CMOS [E-CMOS Corporation]
Strona internetowa  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC733341L Arkusz danych(HTML) 2 Page - E-CMOS Corporation

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EC733341L
-30V、
、
、
、-4.2A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
4L04N-Rev.F001
Electrical Characteristics (TA=25℃
℃
℃
℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250µA
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-1
µA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250µA
-0.7
-2
V
VGS=-10V, ID=-4.2A
42
50
VGS=-4.5V, ID=-4A
53
65
Drain-Source On-State Resistance RDS(ON)
VGS=-2.5V, ID=-1A
80
120
m
Forward Transconductance
gFS
VDS=-5V,ID=-5A
10
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
950
PF
Output Capacitance
Coss
120
PF
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
70
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
6.5
nS
Turn-on Rise Time
tr
3
nS
Turn-Off Delay Time
td(off)
30
nS
Turn-Off Fall Time
tf
VDD=-15V,ID=-3.2A
VGS=-10V,RGEN=6
120
nS
Total Gate Charge
Qg
9.6
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
Qgd
VDS=-15V,ID=-4A,
VGS=-4.5V
2.6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-1.2
V


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