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SI4816BDY Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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1 / 9 page FEATURES D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested G2 S2 N-Channel 2 MOSFET Schottky Diode A G1 D1 N-Channel 1 MOSFET S1/D2 Si4816BDY Vishay Siliconix New Product Document Number: 73026 S-41510—Rev. A, 09-Aug-04 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) Channel-1 0.0185 @ VGS = 10 V 6.8 78 Channel-1 30 0.0225 @ VGS = 4.5 V 6.0 7.8 Channel 2 30 0.0115 @ VGS = 10 V 11.4 11 6 Channel-2 0.016 @ VGS = 4.5 V 9.5 11.6 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 G1 D1 A/S2 D2/S1 A/S2 D2/S1 G2 D2/S1 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4816BDY—E3 Si4816BDY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Channel-2 Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 6.8 5.8 11.4 8.2 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 5.5 4.6 9.0 6.5 A Pulsed Drain Current IDM 30 40 A Continuous Source Current (Diode Conduction)a IS 1 0.9 2.2 1.15 Maximum Power Dissipationa TA = 25_C PD 1.4 1.0 2.4 1.25 W Maximum Power Dissipationa TA = 70_C PD 0.9 0.64 1.5 0.8 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Schottky Parameter Symbol Typ Max Typ Max Typ Max Unit Mi J ti t A bi ta t v 10 sec R 72 90 43 53 48 60 Maximum Junction-to-Ambienta Steady-State RthJA 100 125 82 100 80 100 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 51 63 25 30 28 35 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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