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NTMD6N03R2 Dane(HTML) 1 Page - ON Semiconductor

Numer części NTMD6N03R2
Szczegółowy opis  Power MOSFET
Pobierz  8 Pages
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NTMD6N03R2 Datasheet(Arkusz danych) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 1
1
Publication Order Number:
NTMD6N03R2/D
NTMD6N03R2
Power MOSFET
30 V, 6 A, Dual N−Channel SO−8
Features
Designed for use in low voltage, high speed switching applications
Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− RDS(on) = 0.024
W, VGS = 10 V (Typ)
− RDS(on) = 0.030
W, VGS = 4.5 V (Typ)
Miniature SO−8 Surface Mount Package Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
Applications
Dc−Dc Converters
Computers
Printers
Cellular and Cordless Phones
Disk Drives and Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
Volts
Gate−to−Source Voltage − Continuous
VGS
"20
Volts
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp
≤ 10 ms)
ID
IDM
6.0
30
Adc
Apk
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
2.0
1.29
Watts
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc,
VDS = 20 Vdc, Peak IL = 9.0 Apk,
L = 10 mH, RG = 25 Ω)
EAS
325
mJ
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJA
62.5
97
°C/W
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
″ pad size, t ≤ 10 s
2. When surface mounted to an FR4 board using 1
″ pad size, t = steady state
Device
Package
Shipping
ORDERING INFORMATION
NTMD6N03R2
SO−8
2500/Tape & Reel
SO−8, DUAL
CASE 751
STYLE 11
2
Source−1
Gate−1
Source−2
Gate−2
3
4
1
7
6
5
8
Drain−1
Drain−1
Drain−2
Drain−2
(Top View)
PIN ASSIGNMENTS
E6N03
= Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
http://onsemi.com
D
S
G
N−Channel
D
S
G
1
8
VDSS
RDS(ON) TYP
ID MAX
30 V
24 m
Ω @ VGS = 10 V
6.0 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MARKING
DIAGRAM
E6N03
LYWW
1
8


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