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NTP75N03L09 Dane(HTML) 3 Page - ON Semiconductor

Numer części NTP75N03L09
Szczegółowy opis  Power MOSFET
Pobierz  8 Pages
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Producent  ONSEMI [ON Semiconductor]
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NTP75N03L09 Datasheet(Arkusz danych) 3 Page - ON Semiconductor

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NTP75N03L09, NTB75N03L09
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain − Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Negative)
V(BR)DSS
30
34
−57
Vdc
mV
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
1.0
10
mAdc
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
±100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.6
−6
2.0
Vdc
mV
°C
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 5.0 Vdc, ID = 37.5 Adc)
RDS(on)
6.5
8.0
m
W
Static Drain−to−Source On Resistance (Note 2)
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 37.5 Adc, TJ = 125°C)
VDS(on)
0.52
0.35
0.68
0.50
Vdc
Forward Transconductance (Notes 2 & 4)
(VDS = 3 Vdc, ID = 20 Adc)
gFS
58
m
W
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance
(V
25 Vdc V
0
Ciss
4398
5635
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
Coss
1160
1894
Transfer Capacitance
f
1.0 MHz)
Crss
317
430
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
(V
5 0 Vdc
td(on)
16
30
ns
Rise Time
(VGS = 5.0 Vdc,
VDD = 20 Vdc, ID = 75 Adc,
)(
)
tr
130
200
Turn−Off Delay Time
VDD
20 Vdc, ID
75 Adc,
RG = 4.7 W) (Note 2)
td(off)
65
110
Fall Time
tf
105
175
Gate Charge
(VGS = 5.0 Vdc,
I
75 Adc
QT
57
75
nC
ID = 75 Adc,
VDS = 24 Vdc) (Note 2)
Q1
11
15
VDS
24 Vdc) (Note 2)
Q2
34
50
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 75 Adc, VGS = 0 Vdc)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 125°C)
(Note 2)
VSD
1.19
1.09
1.25
Vdc
Reverse Recovery Time
(Note 4)
(I
75 Adc V
0 Vdc
trr
37
ns
(Note 4)
(IS = 75 Adc, VGS = 0 Vdc
dlS/dt = 100 A/ms) (Note 2)
ta
20
Reverse Recovery Stored
Charge (Note 4)
dlS/dt
100 A/
ms) (Note 2)
tb
17
mC
Charge (Note 4)
QRR
0.023
2. Pulse Test: Pulse Width
v 300 mS, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.


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