Si5463EDC

Vishay Siliconix

Document Number: 71364

S-21251—Rev. C, 05-Aug-02

www.vishay.com

2-1

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

--5.1

20

--4.9

--20

--4.4

--3.7

1206-8 ChipFETt

D

D

D

G

D

D

D

S

1

Bottom View

Marking Code

LB XX

Lot Traceability

and Date Code

Part #

Code

S

5.4 kΩ

D

P-Channel MOSFET

G

Ordering Information: Si5463EDC-T1

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

--20

V

Gate-Source Voltage

12

V

--5.1

--3.8

--3.7

--2.7

A

Pulsed Drain Current

--15

A

--1.9

--1.0

2.3

1.25

W

1.2

0.65

W

Operating Junction and Storage Temperature Range

--55 to 150

_

C

260

_

C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

M i

J

ti

t ≤ 5sec

R

45

55

Steady State

84

100

_

C/W

Maximum Junction-to-Foot (Drain)

Steady State

20

25

C/

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

When using HBM. The MM rating is 300 V

c.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-

tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-

connection.

d.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.