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BCW60AR-CR Arkusz danych(PDF) 2 Page - Zetex Semiconductors |
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BCW60AR-CR Arkusz danych(HTML) 2 Page - Zetex Semiconductors |
2 / 2 page SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 AUGUST 1995 PARTMARKING DETAILS BCW60A AA BCW60AR CR BCW60B AB BCW60BR DR BCW60C AC BCW60CR AR BCW60D AD BCW60DR BR COMPLEMENTARY TYPE BCW61 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 32 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5V Continuous Collector Current IC 200 mA Base Current IB 50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFEGroup A hFEGroup B hFEGroup C hFEGroup D Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ h12e 1.5 2 2 3 10-4 h21e 200 260 330 520 h22e 18 30 24 50 30 60 50 100 µ S SWITCHING CIRCUIT BCW60 PAGE NO ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO 32 V IC=2mA Emitter-Base Breakdown Voltage V(BR)EBO 5V IEBO=1µA Collector-Emitter Cut-off Current ICES 20 20 nA µ A VCES=32V VCES=32V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO 20 nA VEBO=4V Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.20 0.35 0.55 V V IC=10mA, IB = 0.25mA IC= 50mA, IB =1.25mA Base-Emitter Saturation Voltage VBE(SAT) 0.60 0.70 0.70 0.83 0.85 1.05 V V IC=10mA, IB=0.25mA IC =50mA, IB=1.25mA Base - Emitter Voltage VBE 0.55 0.52 0.65 0.78 0.75 V V V IC=10µA, VCE=5V IC=2mA, VCE=5V IC=50mA, VCE=1V Static BCW60A Forward Current Transfer BCW60B Ratio BCW60C BCW60D hFE 120 50 78 170 220 IC=10µA, VCE=5V IC=2mA, VCE=5V IC=50mA, VCE=1V 20 180 70 145 250 310 IC=10µA, VCE=5V IC=2mA, VCE=5V IC=50mA, VCE=1V 40 250 90 220 350 460 IC=10µA, VCE=5V IC=2mA, VCE=5V IC=50mA, VCE=1V 100 380 100 300 500 630 IC=10µA, VCE=5V IC=2mA, VCE=5V IC=50mA, VCE=1V Transition Frequency fT 125 250 MHz IC =10mA, VCE=5V f = 100MHz Emitter-Base Capacitance Cebo 8pF VEBO=0.5V, f =1MHz Collector-Base Capacitance Ccbo 4.5 pF VCBO=10V, f =1MHz Noise Figure N 2 6 dB IC= 0.2mA, VCE= 5V RG =2KΩ, f=1KH ∆ f=200Hz Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff 35 50 85 400 80 480 150 800 ns ns ns ns ns ns IC:IB1:- IB2=10:1:1mA R1=5KΩ, R2=5KΩ VBB=3.6V, RL=990Ω *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device BCW60 C B E SOT23 R1 R2 RL 50Ω VCC(+10V) -VBB +10V tr < 5nsec Zin ≥ 100kΩ Oscilloscope 1µsec tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω |
Podobny numer części - BCW60AR-CR |
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Podobny opis - BCW60AR-CR |
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