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FGB40T65SP Arkusz danych(PDF) 4 Page - ON Semiconductor |
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FGB40T65SP Arkusz danych(HTML) 4 Page - ON Semiconductor |
4 / 11 page ©Semiconductor Components Industries, LLC, 2016 3 www.onsemi.com November 2016 - Rev. 1.0 Electrical Characteristics of the IGBT (Continued) Electrical Characteristics of the Diode T C = 25 °C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max Units Qg Total Gate Charge VCE = 400V, IC = 40A, VGE = 15V -36 - nC Qge Gate to Emitter Charge - 12 - nC Qgc Gate to Collector Charge - 11 - nC Symbol Parameter Test Conditions Min. Typ. Max Units VFM Diode Forward Voltage IF = 20A TC = 25 oC- 2.0 2.7 V TC = 175 oC- 1.8 - Erec Reverse Recovery Energy IF = 20A, dIF/dt = 200A/μs TC = 175 oC- 51 - μJ Trr Diode Reverse Recovery Time TC = 25 oC- 34 - ns TC = 175 oC - 206 - Qrr Diode Reverse Recovery Charge TC = 25 oC- 56 - nC TC = 175 oC - 731 - Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.56 oC/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.71 oC/W RθJA Thermal Resistance, Junction to Ambient - 40 oC/W |
Podobny numer części - FGB40T65SP |
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Podobny opis - FGB40T65SP |
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