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SI2319DS-T1 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI2319DS-T1 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si2319DS Vishay Siliconix Document Number: 72315 S-40844—Rev. B, 03-May-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 246 8 10 12 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40 0.00 0.04 0.08 0.12 0.16 0.20 0 246 8 10 12 0 4 8 12 16 20 0 2468 10 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 On-Resistance vs. Drain Current Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) TC = 125_C −55_C VGS = 10 thru 5 V 1 V, 2 V 3 V Gate Charge Qg − Total Gate Charge (nC) VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 20 V ID = 3 A ID − Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A TJ − Junction Temperature (_C) VGS = 10 V VGS = 4.5 V 25_C 4 V |
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