TSHG620 datasheet(2/5 Pages) VISHAY

Numer części	TSHG620

Szczegółowy opis	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

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Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

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Document Number 81078

Rev. 1.3, 08-Mar-05

VISHAY

TSHG6200

Vishay Semiconductors

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Reverse Current

VR = 5 V

IR

10

µA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

125

pF

Radiant Intensity

IF = 100 mA, tp = 20 ms

Ie

80

160

400

mW/sr

IF = 1 A, tp = 100 µsIe

1600

mW/sr

Radiant Power

IF = 100 mA, tp = 20 ms

φ

e

50

mW

Temp. Coefficient of

φ

e

IF = 100 mA

TK

φ

e

-0.35

%/K

Angle of Half Intensity

ϕ

±10

deg

Peak Wavelength

IF = 100 mA

λ

p

850

nm

Spectral Bandwidth

IF = 100 mA

∆λ

40

nm

Temp. Coefficient of

λ

p

IF = 100 mA

TK

λ

p

0.25

nm/K

Rise Time

IF = 100 mA

tr

20

ns

Fall Time

IF = 100 mA

tf

13

ns

Cut-Off Frequency

IDC = 70 mA, IAC = 30 mA pp

fc

20

MHz

Virtual Source Diameter

∅

3.7

mm

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Figure 1. Power Dissipation vs. Ambient Temperature

Figure 2. Forward Current vs. Ambient Temperature

0

50

100

150

200

250

300

0

1020 3040 5060 7080 90 100

Tamb – Ambient Temperature ( °C )

16647

RthJA

0

25

50

75

100

125

150

175

200

0

1020 3040 5060 7080 90 100

Tamb – Ambient Temperature ( C )

16964

RthJA

Figure 3. Pulse Forward Current vs. Pulse Duration

Figure 4. Forward Current vs. Forward Voltage

100

1000

0.01

0.11.0

10

100

tp -Pulse Duration ( ms )

16031

t p/ T= 0.01

0.05

0.2

0.5

0.1

0.02

Tamb< 50

°

18873

1000

100

10

1

VF - Forward Voltage( V )

01

2

3

4

t = 100

µs

p

t / T = 0.001

p

Podobny numer części - TSHG620

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	TSHG6200	117Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.5, 28-Nov-06
	TSHG6200	116Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.6, 04-Dec-07
	TSHG6200	103Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.7, 29-Jun-09
	TSHG6200	112Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.8, 24-Aug-11
	TSHG6200	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2022

More results

Podobny opis - TSHG620

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	TSHG6410	103Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 08-Jul-09
	TSHG6200	116Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.6, 04-Dec-07
	TSHG5410	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
	TSHG6200	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG5210	107Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG6410	112Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG5210	113Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSHG6210	112Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	VSMG3700	127Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.4, 06-Oct-10
	TSHG6400	103Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.1, 29-Jun-09
	TSHG6400	106Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 23-Aug-11

More results

TSHG620 Arkusz danych(PDF) 2 Page - Vishay Siliconix

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