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TC55VBM416AFTN55 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor

Numer części TC55VBM416AFTN55
Szczegółowy opis  1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC55VBM416AFTN55 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor

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TC55VBM416AFTN55
2002-08-29
3/14
OPERATING MODE
MODE
1
CE
CE2
OE
R/W
BYTE
LB
UB
I/O1~I/O8
I/O9~I/O15
I/O16
POWER
L
H
L
H
L
*
*
Output
High-Z
A-1
IDDO
L
H
L
H
H
L
L
Output
Output
Output
IDDO
L
H
L
H
H
H
L
High-Z
Output
Output
IDDO
Read
L
H
L
H
H
L
H
Output
High-Z
High-Z
IDDO
L
H
*
L
L
*
*
Input
High-Z
A-1
IDDO
L
H
*
L
H
L
L
Input
Input
Input
IDDO
L
H
*
L
H
H
L
High-Z
Input
Input
IDDO
Write
L
H
*
L
H
L
H
Input
High-Z
High-Z
IDDO
L
H
H
H
L
*
*
High-Z
High-Z
A-1
IDDO
L
H
H
H
H
L
L
High-Z
High-Z
High-Z
IDDO
L
H
H
H
H
H
L
High-Z
High-Z
High-Z
IDDO
Output Deselect
L
H
H
H
H
L
H
High-Z
High-Z
High-Z
IDDO
H
*
*
*
H or L
*
*
High-Z
High-Z
High-Z
IDDS
*
L
*
*
H or L
*
*
High-Z
High-Z
High-Z
IDDS
Standby
*
*
*
*
H
H
H
High-Z
High-Z
High-Z
IDDS
* = don't care
H = logic high
L = logic low
MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
−0.3~4.2
V
VIN
Input Voltage
−0.3*~4.2
V
VI/O
Input/Output Voltage
−0.5~VDD + 0.5
V
PD
Power Dissipation
0.6
W
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
−55~150
°C
Topr
Operating Temperature
−40~85
°C
*:
−2.0 V when measured at a pulse width of 20ns
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== −−−−40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
2.3
3.6
V
VDD = 2.3 V~2.7 V
2.0
VIH
Input High Voltage
VDD = 2.7 V~3.6 V
2.2
VDD + 0.3
V
VIL
Input Low Voltage
−0.3*
VDD × 0.24
V
VDH
Data Retention Supply Voltage
1.5
3.6
V
*:
−2.0 V when measured at a pulse width of 20ns


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