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BDW47G Arkusz danych(PDF) 4 Page - ON Semiconductor

Numer części BDW47G
Szczegółowy opis  Darlington Complementary Silicon Power Transistors
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BDW47G Arkusz danych(HTML) 4 Page - ON Semiconductor

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BDW42* − NPN, BDW46, BDW47* − PNP
http://onsemi.com
4
ACTIVE−REGION SAFE OPERATING AREA
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE)
50
1.0
Figure 5. BDW42
20
2.0
0.05
10
20
100
TJ = 25°C
BDW42
1.0 ms
0.1 ms
0.2
5.0
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
30
70
1.0
0.1
0.5 ms
dc
2.0
50
3.0
5.0
7.0
Figure 6. BDW46 and BDW47
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE)
50
1.0
20
2.0
0.05
10
20
100
TJ = 25°C
BDW46
BDW47
1.0 ms
0.1 ms
0.2
5.0
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
30
70
1.0
0.1
0.5 ms
dc
2.0
50
3.0
5.0
7.0
There are two limitations on the power handling ability of a
transistor:
average
junction
temperature
and
second
breakdown. Safe operating area curves indicate IC − VCE limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
TJ(pk) = 200
_C; TC is variable depending on conditions.
Second breakdown pulse limits are valid for duty cycles to
10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
10,000
1.0
Figure 7. Small−Signal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50
100
200
1000
500
300
100
5000
20
3000
200
500
2000
1000
30
50
BDW46, 47 (PNP)
BDW42 (NPN)
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
300
0.1
Figure 8. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
5.0
20
100
10
200
100
70
50
TJ = + 25°C
Cib
Cob
50
0.2
0.5
BDW46, 47 (PNP)
BDW42 (NPN)


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