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1PS10SB82 Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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1PS10SB82 Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2003 Aug 20 3 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB82 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. Soldering Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage see Fig.2 IF =1mA − 340 mV IF =30mA − 700 mV rD differential diode forward resistance f = 1 MHz; IF = 5 mA; see Fig.5 12 −Ω IR continuous reverse current VR = 1 V; see Fig.3; note 1 − 0.2 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.4 1 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
Podobny numer części - 1PS10SB82 |
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Podobny opis - 1PS10SB82 |
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