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BDW94 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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BDW94 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BDW94/C Rev. B January 2005 BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively Absolute Maximum Ratings T a = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BDW94 : BDW94C -45 -100 V V VCEO Collector-Emitter Voltage : BDW94 : BDW94C -45 -100 V V IC Collector Current (DC) -12 A ICP Collector Current (Pulse) * -15 A IB Base Current -0.2 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C 1.Base 2.Collector 3.Emitter 1 TO-220 |
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