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SI4876DY-T1 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI4876DY-T1 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si4876DY Vishay Siliconix Document Number: 71312 S-03950—Rev. C, 26-May-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.000 0.002 0.004 0.006 0.008 0.010 0 10203040 50 0 2 4 6 8 10 0 20 40 60 80 100 120 140 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 2000 4000 6000 8000 04 8 12 16 20 Crss Coss Ciss VDS = 10 V ID = 21 A VGS = 4.5 V ID = 21 A VGS = 2.5 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 1.0 1.2 0.000 0.005 0.010 0.015 0.020 0 1234 5 1 10 50 ID = 21 A 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V |
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